Effects of introduction of argon on structural and transparent conducting properties of ZnO-In2O3 thin films prepared by pulsed laser deposition
Identifieur interne : 009F29 ( Main/Repository ); précédent : 009F28; suivant : 009F30Effects of introduction of argon on structural and transparent conducting properties of ZnO-In2O3 thin films prepared by pulsed laser deposition
Auteurs : RBID : Pascal:05-0475211Descripteurs français
- Pascal (Inist)
- Etude expérimentale, Préparation, Méthode phase vapeur, Méthode ablation laser, Laser pulsé, Texture, Effet composition, Conductivité électrique, Mobilité Hall, Densité porteur charge, Rugosité, Diffraction RX, Microscopie force atomique, Couche mince, Couche épaisse, Zinc oxyde, Indium oxyde, Matériau transparent, Matériau amorphe, ZnO-In2O3, In O Zn, Substrat verre, 8115F, 6855J.
- Wicri :
- concept : Matériau amorphe.
English descriptors
- KwdEn :
- Amorphous material, Atomic force microscopy, Carrier density, Composition effect, Electrical conductivity, Experimental study, Growth from vapor, Hall mobility, Indium oxides, Laser ablation technique, Preparation, Pulsed lasers, Roughness, Texture, Thick films, Thin films, Transparent material, XRD, Zinc oxides.
Abstract
Indium-zinc oxide thin films were deposited on a glass substrate from a ZnO and In2O3 mixed target by a pulsed laser deposition technique. The effects on surface texture, structure and transparent conducting properties of the introduction of argon into the chamber during the depositions of amorphous and homologous ZnO-In2O3 thin films were examined. The compositional range where amorphous films formed was widened by the introduction of argon. Resistivity in the region where the amorphous phase appeared increased slightly, with an increase of zinc content, due to the counteractions of decreased Hall mobility and increased carrier concentration. Introduction of argon improved surface roughness of the films and reduced and regulated particle and/or crystallite sizes of the films.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Effects of introduction of argon on structural and transparent conducting properties of ZnO-In<sub>2</sub>O<sub>3</sub> thin films prepared by pulsed laser deposition</title><author><name sortKey="Moriga, Toshihiro" uniqKey="Moriga T">Toshihiro Moriga</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemical Science and Technology, Faculty of Engineering, University of Tokushima</s1><s2>2-1 Minami-Josanjima, Tokushima 770-8506</s2><s3>JPN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>2-1 Minami-Josanjima, Tokushima 770-8506</wicri:noRegion></affiliation></author><author><name sortKey="Mikawa, Michio" uniqKey="Mikawa M">Michio Mikawa</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Telecommunications, Takuma National College of Technology, 551 Kouda, Takuma</s1><s2>Mitoyo, Kagawa 769-1192</s2><s3>JPN</s3><sZ>2 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Mitoyo, Kagawa 769-1192</wicri:noRegion></affiliation></author><author><name sortKey="Sakakibara, Yuji" uniqKey="Sakakibara Y">Yuji Sakakibara</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemical Science and Technology, Faculty of Engineering, University of Tokushima</s1><s2>2-1 Minami-Josanjima, Tokushima 770-8506</s2><s3>JPN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>2-1 Minami-Josanjima, Tokushima 770-8506</wicri:noRegion></affiliation></author><author><name sortKey="Misaki, Yukinori" uniqKey="Misaki Y">Yukinori Misaki</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Electronics, Takuma National College of Technology, 551 Kouda, Takuma</s1><s2>Mitoyo, Kagawa 769-1192</s2><s3>JPN</s3><sZ>4 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Mitoyo, Kagawa 769-1192</wicri:noRegion></affiliation></author><author><name sortKey="Murai, Kei Ichiro" uniqKey="Murai K">Kei-Ichiro Murai</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemical Science and Technology, Faculty of Engineering, University of Tokushima</s1><s2>2-1 Minami-Josanjima, Tokushima 770-8506</s2><s3>JPN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>2-1 Minami-Josanjima, Tokushima 770-8506</wicri:noRegion></affiliation></author><author><name sortKey="Nakabayashi, Ichiro" uniqKey="Nakabayashi I">Ichiro Nakabayashi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemical Science and Technology, Faculty of Engineering, University of Tokushima</s1><s2>2-1 Minami-Josanjima, Tokushima 770-8506</s2><s3>JPN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>2-1 Minami-Josanjima, Tokushima 770-8506</wicri:noRegion></affiliation></author><author><name sortKey="Tominaga, Kikuo" uniqKey="Tominaga K">Kikuo Tominaga</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Department of Electric and Electronic Engineering, Faculty of Engineering, University of Tokushima</s1><s2>2-1 Minami-Josanjima, Tokushima 770-8506</s2><s3>JPN</s3><sZ>7 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>2-1 Minami-Josanjima, Tokushima 770-8506</wicri:noRegion></affiliation></author><author><name sortKey="Metson, James B" uniqKey="Metson J">James B. Metson</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Department of Chemistry, University of Auckland, Private Bag 92019</s1><s2>Auckland</s2><s3>NZL</s3><sZ>8 aut.</sZ></inist:fA14><country>Nouvelle-Zélande</country><wicri:noRegion>Auckland</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">05-0475211</idno><date when="2005">2005</date><idno type="stanalyst">PASCAL 05-0475211 INIST</idno><idno type="RBID">Pascal:05-0475211</idno><idno type="wicri:Area/Main/Corpus">009A76</idno><idno type="wicri:Area/Main/Repository">009F29</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Amorphous material</term><term>Atomic force microscopy</term><term>Carrier density</term><term>Composition effect</term><term>Electrical conductivity</term><term>Experimental study</term><term>Growth from vapor</term><term>Hall mobility</term><term>Indium oxides</term><term>Laser ablation technique</term><term>Preparation</term><term>Pulsed lasers</term><term>Roughness</term><term>Texture</term><term>Thick films</term><term>Thin films</term><term>Transparent material</term><term>XRD</term><term>Zinc oxides</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term><term>Préparation</term><term>Méthode phase vapeur</term><term>Méthode ablation laser</term><term>Laser pulsé</term><term>Texture</term><term>Effet composition</term><term>Conductivité électrique</term><term>Mobilité Hall</term><term>Densité porteur charge</term><term>Rugosité</term><term>Diffraction RX</term><term>Microscopie force atomique</term><term>Couche mince</term><term>Couche épaisse</term><term>Zinc oxyde</term><term>Indium oxyde</term><term>Matériau transparent</term><term>Matériau amorphe</term><term>ZnO-In2O3</term><term>In O Zn</term><term>Substrat verre</term><term>8115F</term><term>6855J</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Matériau amorphe</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Indium-zinc oxide thin films were deposited on a glass substrate from a ZnO and In<sub>2</sub>O<sub>3</sub> mixed target by a pulsed laser deposition technique. The effects on surface texture, structure and transparent conducting properties of the introduction of argon into the chamber during the depositions of amorphous and homologous ZnO-In<sub>2</sub>O<sub>3</sub> thin films were examined. The compositional range where amorphous films formed was widened by the introduction of argon. Resistivity in the region where the amorphous phase appeared increased slightly, with an increase of zinc content, due to the counteractions of decreased Hall mobility and increased carrier concentration. Introduction of argon improved surface roughness of the films and reduced and regulated particle and/or crystallite sizes of the films.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>486</s2></fA05><fA06><s2>1-2</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Effects of introduction of argon on structural and transparent conducting properties of ZnO-In<sub>2</sub>O<sub>3</sub> thin films prepared by pulsed laser deposition</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Oxide electronics</s1></fA09><fA11 i1="01" i2="1"><s1>MORIGA (Toshihiro)</s1></fA11><fA11 i1="02" i2="1"><s1>MIKAWA (Michio)</s1></fA11><fA11 i1="03" i2="1"><s1>SAKAKIBARA (Yuji)</s1></fA11><fA11 i1="04" i2="1"><s1>MISAKI (Yukinori)</s1></fA11><fA11 i1="05" i2="1"><s1>MURAI (Kei-Ichiro)</s1></fA11><fA11 i1="06" i2="1"><s1>NAKABAYASHI (Ichiro)</s1></fA11><fA11 i1="07" i2="1"><s1>TOMINAGA (Kikuo)</s1></fA11><fA11 i1="08" i2="1"><s1>METSON (James B.)</s1></fA11><fA12 i1="01" i2="1"><s1>HOSONO (Hideo)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>LIPPMAA (Mikk)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>KARPPINEN (Maarit)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Department of Chemical Science and Technology, Faculty of Engineering, University of Tokushima</s1><s2>2-1 Minami-Josanjima, Tokushima 770-8506</s2><s3>JPN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Telecommunications, Takuma National College of Technology, 551 Kouda, Takuma</s1><s2>Mitoyo, Kagawa 769-1192</s2><s3>JPN</s3><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Electronics, Takuma National College of Technology, 551 Kouda, Takuma</s1><s2>Mitoyo, Kagawa 769-1192</s2><s3>JPN</s3><sZ>4 aut.</sZ></fA14><fA14 i1="04"><s1>Department of Electric and Electronic Engineering, Faculty of Engineering, University of Tokushima</s1><s2>2-1 Minami-Josanjima, Tokushima 770-8506</s2><s3>JPN</s3><sZ>7 aut.</sZ></fA14><fA14 i1="05"><s1>Department of Chemistry, University of Auckland, Private Bag 92019</s1><s2>Auckland</s2><s3>NZL</s3><sZ>8 aut.</sZ></fA14><fA15 i1="01"><s1>Tokyo Institute of Technology</s1><s3>JPN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></fA15><fA15 i1="02"><s1>University of Tokyo</s1><s3>JPN</s3><sZ>2 aut.</sZ></fA15><fA20><s1>53-57</s1></fA20><fA21><s1>2005</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000132314450120</s5></fA43><fA44><s0>0000</s0><s1>© 2005 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>20 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>05-0475211</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>CHE</s0></fA66><fC01 i1="01" l="ENG"><s0>Indium-zinc oxide thin films were deposited on a glass substrate from a ZnO and In<sub>2</sub>O<sub>3</sub> mixed target by a pulsed laser deposition technique. The effects on surface texture, structure and transparent conducting properties of the introduction of argon into the chamber during the depositions of amorphous and homologous ZnO-In<sub>2</sub>O<sub>3</sub> thin films were examined. The compositional range where amorphous films formed was widened by the introduction of argon. Resistivity in the region where the amorphous phase appeared increased slightly, with an increase of zinc content, due to the counteractions of decreased Hall mobility and increased carrier concentration. Introduction of argon improved surface roughness of the films and reduced and regulated particle and/or crystallite sizes of the films.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15F</s0></fC02><fC02 i1="02" i2="3"><s0>001B60H55J</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Etude expérimentale</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Préparation</s0><s5>03</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Preparation</s0><s5>03</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Preparación</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Méthode phase vapeur</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Growth from vapor</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Método fase vapor</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Méthode ablation laser</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Laser ablation technique</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Laser pulsé</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Pulsed lasers</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Texture</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Texture</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Effet composition</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Composition effect</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Efecto composición</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Conductivité électrique</s0><s5>09</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Electrical conductivity</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Mobilité Hall</s0><s5>10</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Hall mobility</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Densité porteur charge</s0><s5>11</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Carrier density</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Rugosité</s0><s5>12</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Roughness</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>13</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>XRD</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Microscopie force atomique</s0><s5>14</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Atomic force microscopy</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Couche mince</s0><s5>15</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Thin films</s0><s5>15</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Couche épaisse</s0><s5>16</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Thick films</s0><s5>16</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Zinc oxyde</s0><s2>NK</s2><s5>17</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Zinc oxides</s0><s2>NK</s2><s5>17</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Indium oxyde</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Indium oxides</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Matériau transparent</s0><s5>19</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Transparent material</s0><s5>19</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Material transparente</s0><s5>19</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Matériau amorphe</s0><s5>20</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Amorphous material</s0><s5>20</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Material amorfo</s0><s5>20</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>ZnO-In2O3</s0><s4>INC</s4><s5>52</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>In O Zn</s0><s4>INC</s4><s5>53</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Substrat verre</s0><s4>INC</s4><s5>54</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>8115F</s0><s2>PAC</s2><s4>INC</s4><s5>56</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>6855J</s0><s2>PAC</s2><s4>INC</s4><s5>57</s5></fC03><fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0><s5>48</s5></fC07><fC07 i1="01" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>48</s5></fC07><fC07 i1="02" i2="3" l="FRE"><s0>Métal transition composé</s0><s5>49</s5></fC07><fC07 i1="02" i2="3" l="ENG"><s0>Transition element compounds</s0><s5>49</s5></fC07><fN21><s1>332</s1></fN21><fN44 i1="01"><s1>PSI</s1></fN44><fN82><s1>PSI</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>WOE11 International Workshop on Oxide Electronics</s1><s2>11</s2><s3>Hakone JPN</s3><s4>2004-10-03</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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